JPH0213829B2 - - Google Patents

Info

Publication number
JPH0213829B2
JPH0213829B2 JP54047244A JP4724479A JPH0213829B2 JP H0213829 B2 JPH0213829 B2 JP H0213829B2 JP 54047244 A JP54047244 A JP 54047244A JP 4724479 A JP4724479 A JP 4724479A JP H0213829 B2 JPH0213829 B2 JP H0213829B2
Authority
JP
Japan
Prior art keywords
layer
channel forming
conductivity type
type
forming layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP54047244A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55140270A (en
Inventor
Kunimitsu Fujiki
Toshihiro Sekikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP4724479A priority Critical patent/JPS55140270A/ja
Publication of JPS55140270A publication Critical patent/JPS55140270A/ja
Publication of JPH0213829B2 publication Critical patent/JPH0213829B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6706—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing leakage current 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H10D30/6759—Silicon-on-sapphire [SOS] substrates

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP4724479A 1979-04-19 1979-04-19 Insulated gate transistor Granted JPS55140270A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4724479A JPS55140270A (en) 1979-04-19 1979-04-19 Insulated gate transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4724479A JPS55140270A (en) 1979-04-19 1979-04-19 Insulated gate transistor

Publications (2)

Publication Number Publication Date
JPS55140270A JPS55140270A (en) 1980-11-01
JPH0213829B2 true JPH0213829B2 (en]) 1990-04-05

Family

ID=12769809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4724479A Granted JPS55140270A (en) 1979-04-19 1979-04-19 Insulated gate transistor

Country Status (1)

Country Link
JP (1) JPS55140270A (en])

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5867066A (ja) * 1981-10-16 1983-04-21 Semiconductor Energy Lab Co Ltd 絶緑ゲート型電界効果半導体装置の作製方法
JPH0812917B2 (ja) * 1985-02-13 1996-02-07 日本電気株式会社 Ｍｉｓトランジスタの動作方法およびｍｉｓトランジスタ
US5238857A (en) * 1989-05-20 1993-08-24 Fujitsu Limited Method of fabricating a metal-oxide-semiconductor device having a semiconductor on insulator (SOI) structure
GB2358084B (en) * 2000-01-07 2004-02-18 Seiko Epson Corp Semiconductor transistor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS567315B2 (en]) * 1973-07-30 1981-02-17
JPS51114077A (en) * 1975-03-31 1976-10-07 Fujitsu Ltd Semiconductor device
JPS51135373A (en) * 1975-05-20 1976-11-24 Agency Of Ind Science & Technol Semiconductor device

Also Published As

Publication number Publication date
JPS55140270A (en) 1980-11-01

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